Quasi-ballistic, nonequilibrium electron distribution in inhomogeneous semiconductor structures

We report on a study of quasi-ballistic transport in deep submicron, inhomogeneous semiconductor structures, focusing on the analysis of signatures found in the full nonequilibrium electron distribution. We perform self-consistent numerical calculations of the Poisson-Boltzmann equations for a model n(+)-n(-)-n(+) GaAs structure and realistic, energy-dependent scattering. We show that, in general, the electron distribution displays significant, temperature dependent broadening and pronounced structure in the high-velocity tail of the distribution. The observed characteristics have a strong spatial dependence, related to the energy-dependence of the scattering, and the large inhomogeneous electric field variations in these systems. We show that in this quasi-ballistic regime, the high-velocity tail structure is due to pure ballistic transport, whereas the strong broadening is due to electron scattering within the channel, and at the source(drain) interfaces.Comment: 4 pages, 2 figure

Landau level mixing by full spin-orbit interactions

We study a two-dimensional electron gas in a perpendicular magnetic field in the presence of both Rashba and Dresselhaus spin-orbit interactions. Using a Bogoliubov transformation we are able to write an approximate formula for the Landau levels, thanks to the simpler form of the resulting Hamiltonian. The exact numerical calculation of the energy levels, is also made simpler by our formulation. The approximate formula and the exact numerical results show excellent agreement for typical semiconductors, especially at high magnetic fields. We also show how effective Zeeman coupling is modified by spin-orbit interactions.Comment: 5 pages, 5 figure

Lateral spin-orbit interaction and spin polarization in quantum point contacts

We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric lateral confinement potentials, affects the spin polarization of the current. We find that even in the absence of external magnetic fields, a variable {\em non-zero spin polarization} can be obtained by controlling the asymmetric shape of the confinement potential. These results suggest a new approach to produce spin polarized electron sources and we study the dependence of this phenomenon on structural parameters and applied magnetic fields. This asymmetry-induced polarization provides also a plausible explanation of our recent observations of a 0.5 conductance plateau (in units of $2e^2/h$) in quantum point contacts made on InAs quantum-well structures. Although our estimates of the required spin-orbit interaction strength in these systems do not support this explanation, they likely play a role in the effects enhanced by electron-electron interactions.Comment: Summited to PRB (2009

Coincident Massless, Minimally Coupled Scalar Correlators on General Cosmological Backgrounds

The coincidence limits of the massless, minimally coupled scalar propagator and its first two derivatives have great relevance for the project of summing up the leading logarithms induced by loops of inflationary gravitons. We use dimensional regularization to derive good analytic approximations for the three quantities on a general cosmological background geometry which underwent inflation.Comment: 30 pages, 5 figures, uses LaTeX2e, Version 2 revised for publication with improved figures and length of 34 page

Two-subband quantum Hall effect in parabolic quantum wells

The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum Hall plateaus. These effects set in with the occupation of the second subband. We discuss our observations in the context of single-particle Landau fan charts of a two-subband system empirically extended by a density dependent subband separation and an enhanced spin-splitting g*.Comment: 5 pages, submitte

Forster energy transfer signatures in optically driven quantum dot molecules

The Forster resonant energy transfer mechanism (FRET) is investigated in optically driven and electrically gated tunnel coupled quantum dot molecules. Two novel FRET induced optical signatures are found in the dressed excitonic spectrum. This is constructed from exciton level occupation as function of pump laser energy and applied bias, resembling a level anticrossing spectroscopy measurement. We observe a redistribution of spectral weight and splitting of the exciton spectral lines. FRET among single excitons induces a splitting in the spatially-direct exciton lines, away from the anticrossing due to charge tunneling in the molecule. However, near the anticrossing, a novel signature appears as a weak satellite line following an indirect exciton line. FRET signatures may also occur among indirect excitons, appearing as split indirect lines. In that case, the signatures appear also in the direct biexciton states, as the indirect satellite mixes in near the tunneling anticrossing region

Spin relaxation rates in quasi-one-dimensional coupled quantum dots

We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of opposite-spin states, and allows phonon-mediated transitions between energy eigenstates. Contributions from all phonon modes and coupling mechanisms in zincblende semiconductors are taken into account. The spin relaxation rate is shown to display a sharp, cusp-like maximum as function of the interdot-barrier width, at a value of the width which can be controlled by an external magnetic field. This remarkable behavior is associated with the symmetric-antisymmetric level splitting in the structure.Comment: 4 figures, Submitted to Applied Physics Letter